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Sl Arora Physics Class 11 Pdf 226
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![Comparison of EMD and BTD for sensing two bits: Memory readback (solid line) and computation error (dashed line). Memory architecture using different number of pillars in the memory array (1 and 4) and materials (GaAs and Si) is shown. (Adapted from Griffiths *et al.*, *IEEE Trans. on Nanotechnology* **11**, 621 (2012) and Xiong *et al.*, *IEEE Trans. on Nanotechnology* **11**, 760 (2012)). []{data-label=”fig:2″}](Fig2.pdf){width=”0.99\linewidth”}
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![Comparison of EMD and BTD for sensing two bits: Memory readback (solid line) and computation error (dashed line). Memory architecture using different number of pillars in the memory array (1 and 4) and materials (GaAs and Si) is shown. (Adapted from Griffiths *et al.*, *IEEE Trans. on Nanotechnology* **11**, 621 (2012) and Xiong *et al.*, *IEEE Trans. on Nanotechnology* **11**, 760 (2012)). []{data-label=”fig:2″}](Fig3.pdf){width=”0.99\linewidth”}
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![Comparison of EMD and BTD for sensing two bits: Memory readback (solid line) and computation error (dashed line). Memory architecture using different number of pillars in the memory array (1 and 4) and materials (GaAs and Si) is shown. (Adapted from Griffiths *et al.*, *IEEE Trans. on Nanotechnology* **11**, 621 (2012) and Xiong *et al.*, *IEEE Trans. on Nanotechnology* **11**, 760 (2012)). []{data-label=”fig:2″}](Fig4.pdf){width=”0.99\linewidth”}
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